Power Reduction and Speed Augmentation in LFSR for Improved Sequence Generation Using Transistor Stacking Method
| International Journal of Computer Trends and Technology (IJCTT) | |
© - April Issue 2013 by IJCTT Journal | ||
Volume-4 Issue-4 | ||
Year of Publication : 2013 | ||
Authors :Vikas Sahu, Mr. Pradeep Kumar |
Vikas Sahu, Mr. Pradeep Kumar "Power Reduction and Speed Augmentation in LFSR for Improved Sequence Generation Using Transistor Stacking Method"International Journal of Computer Trends and Technology (IJCTT),V4(4):560-566 April Issue 2013 .ISSN 2231-2803.www.ijcttjournal.org. Published by Seventh Sense Research Group.
Abstract: -In many electronics circuit Linear Feedback Shift Register (LFSR) used for generating sequences. So for high performance applications LFSR should have to generate efficient sequences. There are so many methods of generating very efficient sequences. The demand and popularity of portable LFSR is driving designers to strive for small silicon area, higher speeds, low power dissipation and reliability. Compared to static LFSR, dynamic LFSR offers good performance. Wide fan-in logic such as domino LFSR is used in high-performance applications. Dynamic domino LFSRs are widely used in modern digital VLSI circuits. These dynamic LFSRs are often favored in high performance designs because of the speed advantage offered over static LFSR circuits. This paper compares different types of LFSR on the basis of performance parameter such as power consumption, propagation delay and leakage current at 65 nm, 45 nm, 32 nm and 25nm technologies for high performance LFSR design. The techniques are compared by performing detailed transistor simulations on benchmark circuits using Microwind 3 and DSCH 3 CMOS layout CAD tools.
References-
[1] Kelin J. Kuhn, “CMOS Transistor Scaling Past 32nm and Implications on Variation,” IEEE journal of Advanced Semiconductor Manufacturing Conference (ASMC), pp 241-246, Aug 2010.
[2] http://www.Niconprecision.com/ereview/spring_2010/ article05.html.
[3] S. Natarajan, “A 32nm Logic Technology Featuring 2nd-Generation High-k + Metal-Gate Transistors, Enhanced Channel Strain and 0.171µm2 SRAM Cell Size in a 291Mb Array,” IEEE journal of electron Device Meeting (IEDM), pp 1-3, Feb 2009.
[4] Yasuo Nara, “Scaling Challenges of MOSFET for 32nm Node and Beyond,” IEEE Journal of VLSI Scaling, Systems & Application. pp 72-73, april 2009.
[5] Xinlin Wang, GhavamShahidi, Phil Oldiges and MukeshKhare, “Device Scaling of High Performance MOSFET with Metal Gate High-K at 32nm Technology Node and Beyond,” IEEE Journal of simulation of semiconductor processes and devices (SISPAD), pp 309-312, sep 2008.
[6] Chattopadhyay, “Low Power Design Techniques for Nanometer Design Processes - 65nm and Smaller,” IEEE Conference on VLSI Design, pp 5-5, feb 2007.
[7] KAUSHIK ROY, SAIBAL MUKHOPADHYAY, HAMID MAHMOODI MEIMAND, “ Leakage Current Mechanisms
Keywords — LFSR, Leakage current, Power dissipation, Propagation Delay and VLSI.